2N6661

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Mfr.Part #
2N6661
Manufacturer
Solid State Inc.
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
MOSFET N-CH 90V 900MA TO39
Stock
1,065
In Stock :
1,065

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Manufacturer :
Solid State Inc.
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
350mA
Min Operating Temperature :
-55°C
Number of Channels :
1
Supplier Device Package :
TO-39
FET Type :
N-Channel
Continuous Drain Current Id :
350
Maximum Operating Temperature :
+150 °C
Packaging :
Bulk
Input Capacitance :
50pF
Factory Lead Time :
14 Weeks
RoHS :
Details
Configuration :
Single
Number of Pins :
3
Operating Temperature Classification :
Military
Height :
6.604mm
Mounting Style :
Through Hole
Pin Count :
3
Power Dissipation (Max) :
6.25W (Tc)
Ambient Temperature Range High :
150°C
Width :
9.398 Dia.mm
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 24V
Brand :
Microchip Technology / Atmel
Mount :
Through Hole
Operating Temp Range :
-55C to 150C
RoHS Status :
Non-RoHS Compliant
Rds On (Max) @ Id, Vgs :
4Ohm @ 1A, 10V
Minimum Operating Temperature :
-55 °C
Turn On Delay Time :
10 ns
Number of Elements per Chip :
1
Mounting Type :
Through Hole
Max Operating Temperature :
150°C
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
Microchip
Drain to Source Breakdown Voltage :
90V
Contact Plating :
Gold
Turn-Off Delay Time :
10 ns
Continuous Drain Current :
0.35(A)
Type :
Power MOSFET
Rad Hardened :
No
Polarity :
N
Drain to Source Resistance :
4Ohm
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Product Category :
MOSFET
Vgs (Max) :
±20V
Power Dissipation :
6.25W
FET Feature :
--
Series :
--
Published :
2010
Drain-Source On-Volt :
90(V)
Power Dissipation-Max :
6.25W Tc
Vgs(th) (Max) @ Id :
2V @ 1mA
Channel Mode :
Enhancement
Threshold Voltage :
800mV
Channel Type :
N
Rds On Max :
4 Ω
Product Type :
MOSFET
Transistor Type :
1 N-Channel
Product Status :
Active
Package / Case :
TO-205AD, TO-39-3 Metal Can
Subcategory :
MOSFETs
Number of Elements :
1
Mounting :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
90V
Current - Continuous Drain (Id) @ 25°C :
350mA Tj
Package Type :
TO-39
Gate-Source Voltage (Max) :
±20(V)
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Transistor Polarity :
N-Channel
Package :
Bag
Datasheets
2N6661
Introducing Transistors - FETs, MOSFETs - Single Solid State Inc. 2N6661 from Xinshop,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, Package / Case:TO-205AD, TO-39-3 Metal Can, 2N6661 pinout, 2N6661 datasheet PDF, 2N6661 amp .Beyond Transistors - FETs, MOSFETs - Single Solid State Inc. 2N6661 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Solid State Inc. 2N6661


N-Channel Bulk 4Ohm @ 1A, 10V ±20V 50pF @ 24V 90V TO-205AD, TO-39-3 Metal Can

2N6661 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 50pF @ 24V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 350mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 90V, and this device has a drainage-to-source breakdown voltage of 90VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.This device has a drain-to-source resistance of 4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 800mV, which means that it will not activate any of its functions when its threshold voltage reaches 800mV.For this transistor to work, a voltage 90V is required between drain and source (Vdss).Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

2N6661 Features


a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 90V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 4Ohm
a threshold voltage of 800mV
a 90V drain to source voltage (Vdss)


2N6661 Applications


There are a lot of Microchip Technology
2N6661 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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