2N6667
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- Mfr.Part #
- 2N6667
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 10A TO220
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 10A
- Collector Emitter Voltage (VCEO) :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- PNP - Darlington
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1mA
- Polarity :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 3V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 10A
- Length :
- 10.53mm
- Voltage - Rated DC :
- -60V
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Height :
- 15.75mm
- Package / Case :
- TO-220-3
- Collector Base Voltage (VCBO) :
- 60V
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Width :
- 4.83mm
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 6.000006g
- Base Part Number :
- 2N6667
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- hFE Min :
- 1000
- Collector Emitter Saturation Voltage :
- 2V
- Published :
- 2007
- Max Power Dissipation :
- 2W
- Current Rating :
- -10A
- Power Dissipation :
- 2W
- Surface Mount :
- No
- Packaging :
- Tube
- Number of Pins :
- 3
- Datasheets
- 2N6667
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6667G Overview
This device has a DC current gain of 1000 @ 5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 100mA, 10A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 10A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.
2N6667G Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
2N6667G Applications
There are a lot of ON Semiconductor
2N6667G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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