2N6667
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- Mfr.Part #
- 2N6667
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 10A TO220
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.83mm
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- -10A
- Pbfree Code :
- yes
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Height :
- 15.75mm
- Continuous Collector Current :
- 10A
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity :
- PNP
- Collector Emitter Saturation Voltage :
- 2V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1mA
- Weight :
- 6.000006g
- Collector Base Voltage (VCBO) :
- 60V
- Base Part Number :
- 2N6667
- Power Dissipation :
- 2W
- Length :
- 10.53mm
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Max Collector Current :
- 10A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 2 Weeks
- Lead Free :
- Lead Free
- Operating Temperature :
- -65°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 3V
- hFE Min :
- 1000
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Transistor Type :
- PNP - Darlington
- Transistor Application :
- AMPLIFIER
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Voltage - Rated DC :
- -60V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Datasheets
- 2N6667
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6667G Overview
This device has a DC current gain of 1000 @ 5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 100mA, 10A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 10A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.
2N6667G Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
2N6667G Applications
There are a lot of ON Semiconductor
2N6667G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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