2SA1052MDTR-E
- Mfr.Part #
- 2SA1052MDTR-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A 3MPAK
- Stock
- 8,501
- In Stock :
- 8,501
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Package :
- Bulk
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA, 12V
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 500nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 1mA, 10mA
- Manufacturer :
- Renesas Electronics Corporation
- HTS Code :
- 8541.21.00.75
- Voltage - Collector Emitter Breakdown (Max) :
- 30 V
- Reach Compliance Code :
- Compliant
- Series :
- -
- Current - Collector (Ic) (Max) :
- 100 mA
- Operating Temperature :
- 150°C (TJ)
- Supplier Device Package :
- 3-MPAK
- Power - Max :
- 150 mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Frequency - Transition :
- -
- Product Status :
- Active
- Datasheets
- 2SA1052MDTR-E

PNP 150°C (TJ) 500nA (ICBO) TO-236-3, SC-59, SOT-23-3 Surface Mount
2SA1052MDTR-E Overview
This device has a DC current gain of 250 @ 2mA, 12V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of 3-MPAK.Detection of Collector Emitter Breakdown at 30 V maximal voltage is present.
2SA1052MDTR-E Features
the DC current gain for this device is 250 @ 2mA, 12V
the vce saturation(Max) is 200mV @ 1mA, 10mA
the supplier device package of 3-MPAK
2SA1052MDTR-E Applications
There are a lot of Renesas Electronics America Inc
2SA1052MDTR-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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