2SAR512PT100
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- Mfr.Part #
- 2SAR512PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 2A MPT3
- Stock
- 8,037
- In Stock ：
- 8,037
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2013
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- -6V
- Operating Temperature :
- 150°C TJ
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- TIN COPPER
- Max Power Dissipation :
- 2W
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 9 Weeks
- Collector Emitter Saturation Voltage :
- -200mV
- hFE Min :
- 200
- Collector Emitter Voltage (VCEO) :
- 400mV
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- JESD-609 Code :
- e2
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 35mA, 700mA
- Number of Terminations :
- 3
- Power - Max :
- 2W
- Terminal Form :
- Flat
- Transition Frequency :
- 430MHz
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 430MHz
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- -30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Package / Case :
- TO-243AA
- Number of Pins :
- 3
- Max Collector Current :
- 2A
- Datasheets
- 2SAR512PT100
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SAR512PT100 Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 35mA, 700mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.430MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
2SAR512PT100 Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 35mA, 700mA
the emitter base voltage is kept at -6V
a transition frequency of 430MHz
2SAR512PT100 Applications
There are a lot of ROHM Semiconductor
2SAR512PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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