2SC5200OTU
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- Mfr.Part #
- 2SC5200OTU
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO264-3
- Stock
- 414
- In Stock ：
- 414
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Mount :
- Through Hole
- Package / Case :
- TO-264-3, TO-264AA
- Number of Terminations :
- 3
- hFE Min :
- 55
- Transition Frequency :
- 30MHz
- Collector Base Voltage (VCBO) :
- 250V
- Gain Bandwidth Product :
- 30MHz
- Max Power Dissipation :
- 150W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Contact Plating :
- Tin
- Transistor Application :
- AMPLIFIER
- Frequency :
- 30MHz
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Max Collector Current :
- 17A
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Published :
- 2005
- Base Part Number :
- 2SC5200
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 250V
- Number of Elements :
- 1
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 250V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Weight :
- 6.756g
- Power Dissipation :
- 150W
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Temperature :
- -50°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SC5200OTU
NPN -50°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole
2SC5200OTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 1A 5V.When VCE saturation is 3V @ 800mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 30MHz.A maximum collector current of 17A volts can be achieved.
2SC5200OTU Features
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
2SC5200OTU Applications
There are a lot of ON Semiconductor
2SC5200OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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