3LN01C-TB-E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

65ns

Lead Free :

Lead Free

Terminal Form :

Gull wing

Length :

2.9mm

HTS Code :

8541.21.00.95

Gate to Source Voltage (Vgs) :

10V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.15A

Power Dissipation-Max :

250mW Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

3.7 Ω @ 80mA, 4V

Turn On Delay Time :

19 ns

Gate Charge (Qg) (Max) @ Vgs :

1.58nC @ 10V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e6

Height :

1.1mm

Operating Temperature :

150°C TJ

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Fall Time (Typ) :

120 ns

Number of Pins :

3

Vgs (Max) :

±10V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

7pF @ 10V

Surface Mount :

yes

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

FET Type :

N-Channel

Published :

2006

Width :

1.5mm

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

150mA Ta

Mounting Type :

Surface Mount

Pin Count :

3

Terminal Position :

Dual

Turn-Off Delay Time :

155 ns

Continuous Drain Current (ID) :

150mA

Power Dissipation :

250mW