3STR1630
- Mfr.Part #
- 3STR1630
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 6A SOT23-3
- Stock
- 19,412
- In Stock :
- 19,412
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Base Part Number :
- 3STR16
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500mA, 5A
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 30V
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Pin Count :
- 3
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Max Collector Current :
- 6A
- Frequency - Transition :
- 100MHz
- Number of Terminations :
- 3
- Max Power Dissipation :
- 500mW
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Power Dissipation :
- 500mW
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Datasheets
- 3STR1630

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
3STR1630 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 500mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 6A volts.
3STR1630 Features
the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 300mV @ 500mA, 5A
the emitter base voltage is kept at 5V
3STR1630 Applications
There are a lot of STMicroelectronics
3STR1630 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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