55GN01CA-TB-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

Dual

Pbfree Code :

yes

Transition Frequency :

5500MHz

Emitter Base Voltage (VEBO) :

3V

Transistor Type :

NPN

Gain :

9.5dB

Transistor Application :

AMPLIFIER

Height :

1.1mm

Max Power Dissipation :

200mW

Number of Terminations :

3

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Continuous Collector Current :

5mA

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Lead Free :

Lead Free

Max Breakdown Voltage :

10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Frequency :

5.5GHz

Published :

2012

Noise Figure (dB Typ @ f) :

1.9dB @ 1GHz

Gain Bandwidth Product :

4.5 GHz

JESD-609 Code :

e6

Power - Max :

200mW

Surface Mount :

yes

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

10V

Collector Base Voltage (VCBO) :

20V

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Factory Lead Time :

5 Weeks

hFE Min :

100

Max Collector Current :

70mA

Length :

2.9mm

Number of Pins :

3

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Width :

1.5mm