55GN01CA-TB-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Collector Emitter Voltage (VCEO) :

10V

Number of Elements :

1

Collector Base Voltage (VCBO) :

20V

Gain Bandwidth Product :

4.5 GHz

Pin Count :

3

Polarity/Channel Type :

NPN

Gain :

9.5dB

ECCN Code :

EAR99

Width :

1.5mm

Operating Temperature :

150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Height :

1.1mm

Terminal Form :

Gull wing

Number of Terminations :

3

Max Collector Current :

70mA

Emitter Base Voltage (VEBO) :

3V

Mounting Type :

Surface Mount

Frequency :

5.5GHz

Continuous Collector Current :

5mA

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Published :

2012

hFE Min :

100

Transistor Element Material :

SILICON

Length :

2.9mm

Pbfree Code :

yes

Lead Free :

Lead Free

Noise Figure (dB Typ @ f) :

1.9dB @ 1GHz

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Max Power Dissipation :

200mW

Surface Mount :

yes

Number of Pins :

3

Transition Frequency :

5500MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Transistor Application :

AMPLIFIER

Power - Max :

200mW

Factory Lead Time :

5 Weeks

Max Breakdown Voltage :

10V

Collector Emitter Breakdown Voltage :

10V

JESD-609 Code :

e6