APT50M65JFLL
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- Mfr.Part #
- APT50M65JFLL
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 58A ISOTOP
- Stock
- 26,313
- In Stock ：
- 26,313
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 7010pF @ 25V
- Fall Time (Typ) :
- 30 ns
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Mounting Type :
- Chassis Mount
- Pulsed Drain Current-Max (IDM) :
- 232A
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Factory Lead Time :
- 26 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 141nC @ 10V
- Mount :
- Chassis Mount, Screw
- JESD-609 Code :
- e1
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 29A, 10V
- RoHS Status :
- RoHS Compliant
- Series :
- POWER MOS 7®
- Turn On Delay Time :
- 12 ns
- Terminal Position :
- UPPER
- Case Connection :
- Isolated
- Number of Pins :
- 4
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.065Ohm
- Rise Time :
- 28ns
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 520W
- Power Dissipation-Max :
- 520W Tc
- Pbfree Code :
- yes
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 29 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Additional Feature :
- UL RECOGNIZED
- Continuous Drain Current (ID) :
- 58A
- Published :
- 1997
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Number of Elements :
- 1
- Terminal Form :
- UNSPECIFIED
- Voltage - Rated DC :
- 500V
- Packaging :
- Tube
- Current Rating :
- 58A
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- SOT-227-4, miniBLOC
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- APT50M65JFLL
N-Channel Tube 65m Ω @ 29A, 10V ±30V 7010pF @ 25V 141nC @ 10V SOT-227-4, miniBLOC
APT50M65JFLL Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 7010pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 58A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 29 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 232A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
APT50M65JFLL Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 58A
the turn-off delay time is 29 ns
based on its rated peak drain current 232A.
APT50M65JFLL Applications
There are a lot of Microsemi Corporation
APT50M65JFLL applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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