APT56F60B2
- Mfr.Part #
- APT56F60B2
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 60A T-MAX
- Stock
- 44,728
- In Stock :
- 44,728
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 28A, 10V
- Package / Case :
- TO-247-3 Variant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 190 ns
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 600V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Turn On Delay Time :
- 65 ns
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 60A
- DS Breakdown Voltage-Min :
- 600V
- Pin Count :
- 3
- Factory Lead Time :
- 22 Weeks
- Power Dissipation-Max :
- 1040W Tc
- Published :
- 1997
- Number of Terminations :
- 3
- Rise Time :
- 75ns
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 11300pF @ 25V
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Pbfree Code :
- yes
- Series :
- POWER MOS 8™
- Mount :
- Through Hole
- Power Dissipation :
- 1.04kW
- Drain Current-Max (Abs) (ID) :
- 56A
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 280nC @ 10V
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-247AB
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 60 ns
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- PURE MATTE TIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- FAST SWITCHING, AVALANCHE RATED
- Datasheets
- APT56F60B2

N-Channel Tube 110m Ω @ 28A, 10V ±30V 11300pF @ 25V 280nC @ 10V 600V TO-247-3 Variant
APT56F60B2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 56A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 190 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 65 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
APT56F60B2 Features
a continuous drain current (ID) of 60A
the turn-off delay time is 190 ns
a 600V drain to source voltage (Vdss)
APT56F60B2 Applications
There are a lot of Microsemi Corporation
APT56F60B2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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