APT56F60L

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

1.04kW

Mount :

Through Hole

Number of Terminations :

3

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

65 ns

Number of Elements :

1

Power Dissipation-Max :

1040W Tc

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Factory Lead Time :

23 Weeks

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Packaging :

Tube

Case Connection :

DRAIN

Vgs (Max) :

±30V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

110m Ω @ 28A, 10V

Drain to Source Voltage (Vdss) :

600V

Input Capacitance (Ciss) (Max) @ Vds :

11300pF @ 25V

DS Breakdown Voltage-Min :

600V

JESD-609 Code :

e3

Rise Time :

75ns

Fall Time (Typ) :

60 ns

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Mounting Type :

Through Hole

Package / Case :

TO-264-3, TO-264AA

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

56A

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Turn-Off Delay Time :

190 ns

Terminal Finish :

PURE MATTE TIN

Published :

1997

Series :

POWER MOS 8™

Continuous Drain Current (ID) :

60A

Transistor Application :

SWITCHING