APTGT100DA170TG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Collector Emitter Breakdown Voltage :

1.7kV

Package / Case :

SP4

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Time :

450 ns

Number of Pins :

20

Factory Lead Time :

22 Weeks

NTC Thermistor :

yes

JESD-30 Code :

R-XUFM-X12

Qualification Status :

Not Qualified

Terminal Finish :

TIN SILVER COPPER

Input Capacitance :

9nF

Turn Off Time-Nom (toff) :

1100 ns

IGBT Type :

Trench Field Stop

Pbfree Code :

yes

Terminal Position :

UPPER

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

POWER CONTROL

VCEsat-Max :

2.4 V

Max Power Dissipation :

560W

Max Collector Current :

150A

Input :

Standard

Mounting Type :

Chassis Mount

Power - Max :

560W

RoHS Status :

RoHS Compliant

Case Connection :

Isolated

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 100A

Number of Terminations :

12

Voltage - Collector Emitter Breakdown (Max) :

1700V

Configuration :

Single

Mount :

Chassis Mount, Screw

Pin Count :

12

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

250μA

Operating Temperature :

-40°C~150°C TJ

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

1.7kV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Cies) @ Vce :

9nF @ 25V

Terminal Form :

UNSPECIFIED