APTGT30DA170T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Input Capacitance (Cies) @ Vce :

2.5nF @ 25V

Turn Off Time-Nom (toff) :

850 ns

Current - Collector Cutoff (Max) :

250μA

Pin Count :

12

Mounting Type :

Chassis Mount

Polarity/Channel Type :

N-Channel

Input :

Standard

Factory Lead Time :

22 Weeks

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

2.4V

Gate-Emitter Voltage-Max :

20V

Voltage - Collector Emitter Breakdown (Max) :

1700V

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

THROUGH-HOLE

Pbfree Code :

yes

Package / Case :

SP1

Published :

2012

Collector Emitter Breakdown Voltage :

1.7kV

Case Connection :

Isolated

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

NTC Thermistor :

yes

Max Collector Current :

45A

Terminal Finish :

TIN SILVER COPPER

Input Capacitance :

2.5nF

Power - Max :

210W

Transistor Application :

Motor Control

Mount :

Chassis Mount, Screw

Radiation Hardening :

No

Configuration :

Single

Terminal Position :

UPPER

Turn On Time :

170 ns

IGBT Type :

Trench Field Stop

Number of Terminations :

12

JESD-609 Code :

e1

Number of Pins :

1

Max Power Dissipation :

210W

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 30A

ECCN Code :

EAR99

Number of Elements :

1