APTGT50DA170T1G
- Mfr.Part #
- APTGT50DA170T1G
- Manufacturer
- Microsemi
- Package / Case
- SP1
- Datasheet
- Download
- Description
- IGBT MODULE 1700V 75A 312W SP1
- Stock
- 6,518
- In Stock :
- 6,518
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - IGBTs - Modules
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 1
- Factory Lead Time :
- 22 Weeks
- Power - Max :
- 312W
- Input :
- Standard
- Current - Collector Cutoff (Max) :
- 250μA
- Mounting Type :
- Chassis Mount
- Case Connection :
- Isolated
- Terminal Form :
- THROUGH-HOLE
- Turn Off Time-Nom (toff) :
- 1100 ns
- Transistor Element Material :
- SILICON
- Input Capacitance :
- 4.4nF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 12
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e1
- NTC Thermistor :
- yes
- Mount :
- Chassis Mount, Screw
- Voltage - Collector Emitter Breakdown (Max) :
- 1700V
- Published :
- 2012
- Turn On Time :
- 450 ns
- IGBT Type :
- Trench Field Stop
- Pin Count :
- 12
- Transistor Application :
- Motor Control
- Max Collector Current :
- 75A
- Max Power Dissipation :
- 312W
- Collector Emitter Voltage (VCEO) :
- 2.4V
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Terminal Position :
- UPPER
- Package / Case :
- SP1
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 50A
- Operating Temperature :
- -40°C~150°C TJ
- Input Capacitance (Cies) @ Vce :
- 4.4nF @ 25V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 1.7kV
- Configuration :
- Single
- Datasheets
- APTGT50DA170T1G
APTGT50DA170T1G datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available at
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