APTGT50DA170T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Input Capacitance (Cies) @ Vce :

4.4nF @ 25V

Collector Emitter Breakdown Voltage :

1.7kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2012

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Pin Count :

12

Max Power Dissipation :

312W

Input Capacitance :

4.4nF

Case Connection :

Isolated

Radiation Hardening :

No

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Current - Collector Cutoff (Max) :

250μA

Number of Terminations :

12

Terminal Position :

UPPER

Input :

Standard

Number of Pins :

1

Operating Temperature :

-40°C~150°C TJ

Package / Case :

SP1

JESD-609 Code :

e1

Pbfree Code :

yes

Max Collector Current :

75A

Factory Lead Time :

22 Weeks

Turn Off Time-Nom (toff) :

1100 ns

Mounting Type :

Chassis Mount

Configuration :

Single

Turn On Time :

450 ns

NTC Thermistor :

yes

RoHS Status :

RoHS Compliant

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 50A

Mount :

Chassis Mount, Screw

Terminal Form :

THROUGH-HOLE

Collector Emitter Voltage (VCEO) :

2.4V

Transistor Application :

Motor Control

ECCN Code :

EAR99

IGBT Type :

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max) :

1700V

Power - Max :

312W