APTGT50DA170T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Turn On Time :

450 ns

Mount :

Chassis Mount, Screw

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Case Connection :

Isolated

Voltage - Collector Emitter Breakdown (Max) :

1700V

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~150°C TJ

NTC Thermistor :

yes

Mounting Type :

Chassis Mount

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 50A

Transistor Application :

Motor Control

Pbfree Code :

yes

Turn Off Time-Nom (toff) :

1100 ns

Power - Max :

312W

Input Capacitance :

4.4nF

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

Configuration :

Single

Collector Emitter Breakdown Voltage :

1.7kV

Number of Pins :

1

Factory Lead Time :

22 Weeks

Input Capacitance (Cies) @ Vce :

4.4nF @ 25V

Current - Collector Cutoff (Max) :

250μA

Package / Case :

SP1

Pin Count :

12

Number of Elements :

1

Input :

Standard

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

IGBT Type :

Trench Field Stop

Max Collector Current :

75A

Terminal Position :

UPPER

Max Power Dissipation :

312W

Number of Terminations :

12

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e1

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Collector Emitter Voltage (VCEO) :

2.4V