APTGT50DA170TG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Published :

2006

Pbfree Code :

yes

Max Collector Current :

75A

Max Power Dissipation :

312W

Turn On Time :

450 ns

NTC Thermistor :

yes

Radiation Hardening :

No

Mount :

Chassis Mount, Screw

Input Capacitance (Cies) @ Vce :

4.4nF @ 25V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

312W

ECCN Code :

EAR99

JESD-609 Code :

e1

Pin Count :

12

Factory Lead Time :

22 Weeks

Number of Pins :

4

Collector Emitter Voltage (VCEO) :

2.4V

Current - Collector Cutoff (Max) :

250μA

IGBT Type :

Trench Field Stop

JESD-30 Code :

R-XUFM-X12

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 50A

Input :

Standard

Package / Case :

SP4

Turn Off Time-Nom (toff) :

1100 ns

Voltage - Collector Emitter Breakdown (Max) :

1700V

Collector Emitter Breakdown Voltage :

1.7kV

Transistor Application :

POWER CONTROL

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

Terminal Position :

UPPER

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Number of Terminations :

12

Input Capacitance :

4.4nF

Terminal Form :

UNSPECIFIED

Configuration :

Single

Polarity/Channel Type :

N-Channel

Case Connection :

Isolated

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount