APTGT50DA170TG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Voltage - Collector Emitter Breakdown (Max) :

1700V

Power - Max :

312W

Radiation Hardening :

No

IGBT Type :

Trench Field Stop

Input Capacitance (Cies) @ Vce :

4.4nF @ 25V

Published :

2006

Configuration :

Single

Current - Collector Cutoff (Max) :

250μA

JESD-609 Code :

e1

NTC Thermistor :

yes

Mount :

Chassis Mount, Screw

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 50A

Pin Count :

12

ECCN Code :

EAR99

Max Collector Current :

75A

Additional Feature :

AVALANCHE RATED

Collector Emitter Voltage (VCEO) :

2.4V

Operating Temperature :

-40°C~150°C TJ

JESD-30 Code :

R-XUFM-X12

Transistor Element Material :

SILICON

Factory Lead Time :

22 Weeks

Terminal Form :

UNSPECIFIED

Turn On Time :

450 ns

Turn Off Time-Nom (toff) :

1100 ns

Input :

Standard

Pbfree Code :

yes

Case Connection :

Isolated

RoHS Status :

RoHS Compliant

Number of Elements :

1

Number of Pins :

4

Number of Terminations :

12

Polarity/Channel Type :

N-Channel

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Input Capacitance :

4.4nF

Collector Emitter Breakdown Voltage :

1.7kV

Max Power Dissipation :

312W

Package / Case :

SP4

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

POWER CONTROL