APTGT75DA170T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Collector Emitter Breakdown Voltage :

1.7kV

Gate-Emitter Voltage-Max :

20V

Input Capacitance :

6.8nF

Collector Emitter Voltage (VCEO) :

2.4V

Transistor Element Material :

SILICON

IGBT Type :

Trench Field Stop

Mount :

Chassis Mount, Screw

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 75A

Turn Off Time-Nom (toff) :

1100 ns

Input :

Standard

Configuration :

Single

Number of Terminations :

12

Terminal Position :

UPPER

RoHS Status :

RoHS Compliant

Input Capacitance (Cies) @ Vce :

6.8nF @ 25V

Case Connection :

Isolated

Terminal Finish :

TIN SILVER COPPER

Qualification Status :

Not Qualified

Max Collector Current :

130A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

Motor Control

Package / Case :

SP1

Operating Temperature :

-40°C~150°C TJ

NTC Thermistor :

yes

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

465W

Terminal Form :

THROUGH-HOLE

Pin Count :

12

Current - Collector Cutoff (Max) :

250μA

Factory Lead Time :

22 Weeks

Power - Max :

465W

ECCN Code :

EAR99

Mounting Type :

Chassis Mount

Published :

2007

Turn On Time :

450 ns

Polarity/Channel Type :

N-Channel

Voltage - Collector Emitter Breakdown (Max) :

1700V

JESD-609 Code :

e1

Number of Elements :

1

Number of Pins :

1