APTM100A40FT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Turn On Delay Time :

44 ns

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Fall Time (Typ) :

38 ns

Radiation Hardening :

No

Number of Terminations :

12

Max Power Dissipation :

390W

Input Capacitance (Ciss) (Max) @ Vds :

7868pF @ 25V

Terminal Finish :

TIN SILVER COPPER

Pbfree Code :

yes

Number of Pins :

1

Power Dissipation :

390W

Gate to Source Voltage (Vgs) :

30V

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

FET Feature :

Standard

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

480m Ω @ 18A, 10V

Packaging :

Bulk

Case Connection :

Isolated

Package / Case :

SP1

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.48Ohm

Drain to Source Voltage (Vdss) :

1000V 1kV

Pin Count :

12

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Turn-Off Delay Time :

150 ns

Mount :

Chassis Mount, Screw

Mounting Type :

Chassis Mount

Continuous Drain Current (ID) :

21A

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

UNSPECIFIED

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Rise Time :

40ns