AS4C4M16SA-7TCN
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- Mfr.Part #
- AS4C4M16SA-7TCN
- Manufacturer
- Alliance Memory, Inc.
- Package / Case
- 54-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 64MBIT PAR 54TSOP II
- Stock
- 4,873
- In Stock ：
- 4,873
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- Manufacturer :
- Alliance Memory, Inc.
- Product Category :
- Memory
- Surface Mount :
- yes
- Packaging :
- Tray
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Access Time :
- 5.4ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 0°C~70°C TA
- Number of Pins :
- 54
- Voltage - Supply :
- 3V~3.6V
- Mounting Type :
- Surface Mount
- Number of Functions :
- 1
- Lead Free :
- Lead Free
- Memory Width :
- 16
- Write Cycle Time - Word, Page :
- 2ns
- Length :
- 22.22mm
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Pitch :
- 0.8mm
- Supply Voltage-Max (Vsup) :
- 3.6V
- Number of Ports :
- 1
- Memory Format :
- DRAM
- Address Bus Width :
- 12b
- Clock Frequency :
- 143MHz
- Package / Case :
- 54-TSOP (0.400, 10.16mm Width)
- Organization :
- 4MX16
- Supply Voltage-Min (Vsup) :
- 3V
- Memory Type :
- Volatile
- Published :
- 2014
- Operating Supply Voltage :
- 3.3V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 54
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Height Seated (Max) :
- 1.2mm
- Memory Interface :
- Parallel
- Operating Mode :
- SYNCHRONOUS
- Supply Voltage :
- 3.3V
- Memory Size :
- 64Mb 4M x 16
- Additional Feature :
- AUTO/SELF REFRESH
- Density :
- 64 Mb
- Datasheets
- AS4C4M16SA-7TCN
Memory Alliance Memory, Inc. AS4C4M16SA-7TCN Overview
Introducing the cutting-edge IC DRAM 64MBIT PAR 54TSOP II, meticulously crafted by Alliance Memory, Inc. This dynamic random-access memory (DRAM) module sets a new standard in performance and reliability, tailored to meet the demanding requirements of modern electronic devices. Designed with precision engineering and utilizing advanced technologies, this memory solution is poised to revolutionize the landscape of integrated circuits.
With a capacity of 64 megabits, this DRAM module delivers unparalleled speed and efficiency, ensuring seamless operation in even the most intensive computing environments. Its compact 54TSOP II package offers space-saving benefits without compromising on performance, making it an ideal choice for space-constrained applications.
Experience the pinnacle of memory technology with the AS4C4M16SA-7TCN, your ultimate solution for high-performance memory requirements.
AS4C4M16SA-7TCN Features
- High-density 64 megabit capacity
- Dynamic random-access memory (DRAM) technology
- PAR (page access refresh) architecture for enhanced reliability
- Compact 54TSOP II package for space-saving integration
- Optimized for high-speed data processing
- Robust construction for long-term durability
- Manufactured by Alliance Memory, Inc., ensuring top-notch quality and consistency
AS4C4M16SA-7TCN Applications
- Embedded Systems: Implement the AS4C4M16SA-7TCN in embedded systems such as industrial controllers and automotive electronics to enable rapid data access and processing. Its high-density capacity and compact form factor make it ideal for space-constrained environments, ensuring reliable performance in demanding applications.
- Networking Devices: Enhance the performance of networking devices including routers, switches, and access points with the AS4C4M16SA-7TCN. Its high-speed data processing capabilities enable efficient handling of network traffic, ensuring seamless connectivity and reliability in mission-critical networking infrastructure.
- Telecommunications Equipment: Integrate the AS4C4M16SA-7TCN into telecommunications equipment such as base stations and network gateways to facilitate fast and reliable data communication. Its robust construction and optimized architecture make it well-suited for the rigorous demands of telecommunications infrastructure, ensuring uninterrupted operation in telecommunications networks.
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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