ATF-331M4-TR2

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

0505 (1412 Metric)

FET Technology :

HIGH ELECTRON MOBILITY

Drain to Source Voltage (Vdss) :

5.5V

Gate to Source Voltage (Vgs) :

-5V

Power - Output :

19dBm

Number of Elements :

1

Lead Free :

Lead Free

Current - Test :

60mA

Qualification Status :

Not Qualified

Transistor Type :

pHEMT FET

ECCN Code :

EAR99

Continuous Drain Current (ID) :

305mA

Max Operating Temperature :

160°C

Peak Reflow Temperature (Cel) :

260

Noise Figure :

0.6dB

Terminal Finish :

Gold

Frequency :

2GHz

Number of Terminations :

4

Voltage - Rated DC :

5.5V

Polarity/Channel Type :

N-Channel

Published :

2013

Operating Mode :

Depletion Mode

Configuration :

Single

Terminal Form :

NO LEAD

Transistor Application :

AMPLIFIER

Current Rating :

305mA

Factory Lead Time :

7 Weeks

Min Operating Temperature :

-65°C

Mount :

Surface Mount

Additional Feature :

LOW NOISE

Gain :

15dB

Voltage - Test :

4V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

4

JESD-609 Code :

e4

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

400mW

RoHS Status :

RoHS Compliant