BAP64-05,215
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- Mfr.Part #
- BAP64-05,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- RF DIODE PIN 175V 250MW TO236AB
- Stock
- 100
- In Stock ：
- 100
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Diodes - RF
- Additional Feature :
- High Voltage
- HTS Code :
- 8541.10.00.70
- Published :
- 1999
- Application :
- ATTENUATOR; SWITCHING
- Diode Capacitance-Max :
- 0.35pF
- Diode Res Test Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Diode Res Test Current :
- 0.5mA
- Diode Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Minority Carrier Lifetime-Nom :
- 1.55 μs
- Configuration :
- COMMON CATHODE, 2 ELEMENTS
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 250mW
- Peak Reflow Temperature (Cel) :
- 260
- Diode Type :
- PIN - 1 Pair Common Cathode
- Resistance @ If, F :
- 1.35Ohm @ 100mA 100MHz
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 13 Weeks
- Diode Capacitance-Nom :
- 0.52pF
- Qualification Status :
- Not Qualified
- Frequency Band :
- S B
- Current - Max :
- 100mA
- Number of Elements :
- 2
- Capacitance @ Vr, F :
- 0.35pF @ 20V 1MHz
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PDSO-G3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Surface Mount :
- yes
- Base Part Number :
- BAP64-05
- Breakdown Voltage-Min :
- 175V
- Diode Forward Resistance-Max :
- 40Ohm
- Voltage - Peak Reverse (Max) :
- 175V
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Datasheets
- BAP64-05,215
PIN - 1 Pair Common Cathode 0.35pF @ 20V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3
BAP64-05,215 Overview
The maximum current of this device is 100mA.This device operates at a maximum reverse voltage of 175V in accordance with its applicable specifications.This device may operate at its lowest breakdown voltage of 175V on occasion.
BAP64-05,215 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 175V
BAP64-05,215 Applications
There are a lot of NXP USA Inc.
BAP64-05,215 applications of RF diodes.
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
- Set top boxes
- RF attenuators and switches
- Low-loss, high-power limiters
- Receiver protectors
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