BCR169WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Voltage - Collector Emitter Breakdown (Max) :

50 V

hFE Min :

120

Min Operating Temperature :

-65 °C

Transistor Polarity :

PNP

Collector Emitter Voltage (VCEO) :

50 V

Number of Pins :

3

Transition Frequency :

200 MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Polarity :

PNP

Current Rating :

-100 mA

Supplier Device Package :

PG-SOT323-3-1

Package / Case :

SC-70, SOT-323

Max Power Dissipation :

250 mW

Package :

Bulk

Mounting Type :

Surface Mount

Max Collector Current :

100 mA

Voltage Rating (DC) :

-50 V

Power - Max :

250 mW

Max Operating Temperature :

150 °C

Current - Collector Cutoff (Max) :

100nA (ICBO)

Current - Collector (Ic) (Max) :

100 mA

Continuous Collector Current :

100

Resistor - Base (R1) :

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 5mA, 5V

Frequency - Transition :

200 MHz

Series :

Automotive, AEC-Q101

Collector Emitter Breakdown Voltage :

50 V

Lead Free :

Lead Free

Packaging :

Tape and Reel

RoHS :

Compliant

Mount :

Surface Mount

Element Configuration :

Single

Product Status :

Active

Transistor Type :

PNP - Pre-Biased