BCW30235
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- Mfr.Part #
- BCW30235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA BCW30 - SMALL SIGNA
- Stock
- 5,883
- In Stock ：
- 5,883
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2009
- Element Configuration :
- Single
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Qualification Status :
- Not Qualified
- Mount :
- Surface Mount
- Base Part Number :
- BCW30
- Max Power Dissipation :
- 250mW
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 32V
- Power Dissipation :
- 250mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 32V
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 2.5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 32V
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Datasheets
- BCW30235
Specialized ICs NXP Semiconductors BCW30235 Overview
The Specialized ICs NXP Semiconductors BCW30235 is a high-performance silicon PNP transistor that excels in various electronic applications due to its robust thermal management and efficient electrical characteristics. With a maximum junction temperature (TJ) of 150°C, this device ensures reliability under thermal stress. The low collector-base leakage current (ICBO) of 100nA minimizes power dissipation, enhancing the overall efficiency of the circuit. The BCW30235 is housed in a TO-236-3, SC-59, SOT-23-3 package, suitable for compact surface mount designs, and is available on a tape and reel (TR) for automated assembly processes, facilitating high-volume production.
Specialized ICs NXP Semiconductors BCW30235 Key Features
The device boasts several key features that make it suitable for a variety of applications:
- The DC current gain (hFE) is rated at 215 at a collector current of 2mA and a base-emitter voltage of 5V.
- VCE saturation (maximum) is very low at 150mV at collector currents of 2.5mA to 50mA, allowing for efficient switching performance.
- Emitter-base voltage is maintained at 5V, optimal for consistent operation across various conditions.
- High transition frequency of 100MHz supports applications requiring fast switching capabilities.
Specialized ICs NXP Semiconductors BCW30235 Applications
The Specialized ICs NXP Semiconductors BCW30235 finds its use in several critical electronic applications including:
- Inverters, where efficient voltage conversion is crucial.
- Interface circuits, enhancing connectivity between various electronic components.
- Driver circuits, providing adequate power control to other electronic modules.
- Muting circuits, essential in audio and signal processing technologies.
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