BCW60C,235
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- Mfr.Part #
- BCW60C,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 553,591
- In Stock ：
- 553,591
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 250MHz
- Mount :
- Surface Mount
- Turn Off Time-Max (toff) :
- 800ns
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Base Part Number :
- BCW60
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 32V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Max Power Dissipation :
- 250mW
- Frequency :
- 250MHz
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 32V
- Published :
- 2001
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Collector Emitter Breakdown Voltage :
- 32V
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 250mW
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 250MHz
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Datasheets
- BCW60C,235
NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW60C,235 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 1.25mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 100mA volts.
BCW60C,235 Features
the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BCW60C,235 Applications
There are a lot of Nexperia USA Inc.
BCW60C,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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