BCX42E6433HTMA1
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- Mfr.Part #
- BCX42E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 125V 0.8A SOT23
- Stock
- 12,985
- In Stock ：
- 12,985
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 330mW
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 30mA, 300mA
- Voltage - Rated DC :
- -125V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -800mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Frequency :
- 150MHz
- Number of Elements :
- 1
- Max Collector Current :
- 800mA
- Transition Frequency :
- 150MHz
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Published :
- 2011
- Base Part Number :
- BCX42
- Collector Base Voltage (VCBO) :
- 125V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 125V
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 800mA
- Transistor Type :
- PNP
- Max Power Dissipation :
- 330mW
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 125V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Datasheets
- BCX42E6433HTMA1
PNP 150°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX42E6433HTMA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 200mA 1V.When VCE saturation is 900mV @ 30mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -800mA.In the part, the transition frequency is 150MHz.A maximum collector current of 800mA volts can be achieved.
BCX42E6433HTMA1 Features
the DC current gain for this device is 40 @ 200mA 1V
the vce saturation(Max) is 900mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 150MHz
BCX42E6433HTMA1 Applications
There are a lot of Infineon Technologies
BCX42E6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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