BD241C

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Mfr.Part #
BD241C
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 3A TO220
Stock
7,562
In Stock :
7,562

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 600mA, 3A
Operating Temperature :
150°C TJ
Mount :
Through Hole
Transistor Element Material :
SILICON
Number of Pins :
3
JESD-609 Code :
e3
Number of Terminations :
3
Width :
4.6mm
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Transition Frequency :
3MHz
Collector Emitter Voltage (VCEO) :
100V
Transistor Type :
NPN
Element Configuration :
Single
Factory Lead Time :
8 Weeks
Mounting Type :
Through Hole
Polarity/Channel Type :
NPN
Max Collector Current :
3A
Pin Count :
3
Emitter Base Voltage (VEBO) :
5V
ECCN Code :
EAR99
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
300μA
Contact Plating :
Tin
RoHS Status :
ROHS3 Compliant
hFE Min :
25
Power Dissipation :
40W
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
100V
Base Part Number :
BD241
Length :
10.4mm
REACH SVHC :
No SVHC
Packaging :
Tube
Number of Elements :
1
Transistor Application :
SWITCHING
Max Power Dissipation :
40W
JEDEC-95 Code :
TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 3A 4V
Collector Emitter Saturation Voltage :
1.2V
Height :
9.15mm
Datasheets
BD241C
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD241C from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Base Part Number:BD241, BD241C pinout, BD241C datasheet PDF, BD241C amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD241C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD241C


NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD241C Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.

BD241C Features


the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


BD241C Applications


There are a lot of STMicroelectronics
BD241C applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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