BD434S
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- Mfr.Part #
- BD434S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 22V 4A TO126-3
- Stock
- 1,718
- In Stock ：
- 1,718
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- Gain Bandwidth Product :
- 3MHz
- Base Part Number :
- BD434
- Current Rating :
- -4A
- Weight :
- 761mg
- Power Dissipation :
- 36W
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 50
- Packaging :
- Bulk
- Max Collector Current :
- 4A
- Emitter Base Voltage (VEBO) :
- -5V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Published :
- 2001
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 5V
- Frequency :
- 3MHz
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -22V
- Transition Frequency :
- 3MHz
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage :
- 22V
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -200mV
- Current - Collector Cutoff (Max) :
- 100μA
- Max Power Dissipation :
- 36W
- Collector Base Voltage (VCBO) :
- -22V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Collector Emitter Voltage (VCEO) :
- 22V
- Datasheets
- BD434S
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD434S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BD434S Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD434S Applications
There are a lot of ON Semiconductor
BD434S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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