BD437
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- Mfr.Part #
- BD437
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 4A SOT32-3
- Stock
- 1,529
- In Stock ：
- 1,529
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Number of Elements :
- 1
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 3MHz
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Base Part Number :
- BD437
- Max Power Dissipation :
- 36W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Max Collector Current :
- 4A
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Element Material :
- SILICON
- Frequency :
- 3MHz
- Surface Mount :
- No
- Current Rating :
- 4A
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 45V
- Transition Frequency :
- 3MHz
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 30
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation :
- 36W
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 45V
- Collector Emitter Saturation Voltage :
- 800mV
- Terminal Finish :
- Tin (Sn)
- Published :
- 2003
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Datasheets
- BD437
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD437G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD437G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD437G Applications
There are a lot of ON Semiconductor
BD437G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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