BD651-S
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- Mfr.Part #
- BD651-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 8A TO220
- Stock
- 3,352
- In Stock ：
- 3,352
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 120V
- JESD-30 Code :
- R-PSFM-T3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Base Part Number :
- BD651
- Pbfree Code :
- yes
- Max Power Dissipation :
- 2W
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 2W
- Collector Emitter Voltage (VCEO) :
- 120V
- Max Collector Current :
- 8A
- Radiation Hardening :
- No
- Polarity :
- NPN
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 500μA
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 750
- JEDEC-95 Code :
- TO-220AB
- Transistor Type :
- NPN - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 50mA, 5A
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 140V
- Collector Emitter Saturation Voltage :
- 2V
- Published :
- 1993
- Element Configuration :
- Single
- Datasheets
- BD651-S
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BD651-S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 50mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BD651-S Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V
BD651-S Applications
There are a lot of Bourns Inc.
BD651-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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