BD677A
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- Mfr.Part #
- BD677A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A SOT32-3
- Stock
- 10,575
- In Stock ：
- 10,575
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- Current Rating :
- 4A
- Length :
- 7.8mm
- Factory Lead Time :
- 8 Weeks
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Type :
- NPN - Darlington
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 500μA
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Saturation Voltage :
- 2.8V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Max Power Dissipation :
- 40W
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Base Part Number :
- BD677
- Width :
- 2.7mm
- Max Collector Current :
- 4A
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 60V
- Transition Frequency :
- 10MHz
- Mounting Type :
- Through Hole
- Polarity :
- NPN
- Contact Plating :
- Tin
- Height :
- 10.8mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Power Dissipation :
- 40W
- hFE Min :
- 750
- Pin Count :
- 3
- Number of Pins :
- 3
- Continuous Collector Current :
- 4A
- Datasheets
- BD677A
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD677A Overview
In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 40mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD677A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD677A Applications
There are a lot of STMicroelectronics
BD677A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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