BD910
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- Mfr.Part #
- BD910
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 15A TO220
- Stock
- 15,897
- In Stock ：
- 15,897
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Max Collector Current :
- 15A
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Through Hole
- Base Part Number :
- BD910
- hFE Min :
- 40
- Pin Count :
- 3
- VCEsat-Max :
- 3 V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Emitter Saturation Voltage :
- 1V
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Frequency :
- 3MHz
- Package / Case :
- TO-220-3
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Power Dissipation :
- 90W
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 3MHz
- Mount :
- Through Hole
- Element Configuration :
- Single
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Power Dissipation :
- 90W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2.5A, 10A
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5A 4V
- Datasheets
- BD910
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD910 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 4V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2.5A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 3MHz is present in the part.Collector current can be as low as 15A volts at its maximum.
BD910 Features
the DC current gain for this device is 15 @ 5A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2.5A, 10A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD910 Applications
There are a lot of STMicroelectronics
BD910 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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