BF623,115
- Mfr.Part #
- BF623,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 250V 0.05A SOT89
- Stock
- 660
- In Stock :
- 660
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 250V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 60MHz
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-243AA
- Frequency :
- 60MHz
- Number of Elements :
- 1
- Power Dissipation :
- 1.1W
- Series :
- Automotive, AEC-Q101
- Base Part Number :
- BF623
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Transition Frequency :
- 60MHz
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-F3
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 250V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 250V
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Max Power Dissipation :
- 1.1W
- Max Collector Current :
- 50mA
- Collector Base Voltage (VCBO) :
- 250V
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 5mA, 30mA
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- VCEsat-Max :
- 0.8 V
- Datasheets
- BF623,115

PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BF623,115 Overview
DC current gain in this device equals 50 @ 25mA 20V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 5mA, 30mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 60MHz.Breakdown input voltage is 250V volts.In extreme cases, the collector current can be as low as 50mA volts.
BF623,115 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 800mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF623,115 Applications
There are a lot of Nexperia USA Inc.
BF623,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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