BF771E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

12V

Max Power Dissipation :

580mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current Rating :

80mA

Terminal Position :

Dual

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Power Dissipation :

580mW

Collector Emitter Breakdown Voltage :

12V

Number of Terminations :

3

Transistor Element Material :

SILICON

Gain :

10dB ~ 15dB

Max Collector Current :

80mA

Published :

2007

Collector Base Voltage (VCBO) :

20V

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

12V

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Transistor Type :

NPN

Number of Elements :

1

Frequency :

8GHz

Transition Frequency :

8000MHz

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Emitter Base Voltage (VEBO) :

2V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Configuration :

Single