BFR182E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

Surface Mount :

yes

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA 8V

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

12V

Current - Collector (Ic) (Max) :

35mA

Pbfree Code :

yes

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Number of Elements :

1

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Collector-Base Capacitance-Max :

0.5pF

Frequency - Transition :

8GHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

250mW

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

AMPLIFIER

Transition Frequency :

8000MHz

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Base Part Number :

BFR182

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Operating Temperature :

150°C TJ

Factory Lead Time :

4 Weeks

Gain :

12dB ~ 18dB

Number of Terminations :

3

Published :

2005

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G3