BFS481H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Reference Standard :

AEC-Q101

Max Breakdown Voltage :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Pins :

6

ECCN Code :

EAR99

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Emitter Base Voltage (VEBO) :

2V

Halogen Free :

Halogen Free

Gain :

20dB

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Height :

800μm

Max Collector Current :

20mA

Polarity :

NPN

Power Dissipation :

175mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Transition Frequency :

8000MHz

Number of Elements :

2

Frequency :

8GHz

Collector Emitter Breakdown Voltage :

12V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 8V

Contact Plating :

Tin

Lead Free :

Lead Free

Base Part Number :

BFS481

Package / Case :

6-VSSOP, SC-88, SOT-363

Terminal Form :

Gull wing

Max Power Dissipation :

175mW

Operating Temperature :

150°C TJ

Transistor Type :

2 NPN (Dual)

Length :

2mm

Width :

1.25mm

Collector Base Voltage (VCBO) :

20V

Packaging :

Tape and Reel (TR)

Collector-Base Capacitance-Max :

0.4pF

Collector Emitter Voltage (VCEO) :

12V

Transistor Application :

AMPLIFIER

Published :

2007