BFU580QX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

60mA

Additional Feature :

LOW NOISE

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

1W

Transition Frequency :

10500MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 30mA 8V

Operating Temperature :

-40°C~150°C TJ

Gain :

8.5dB

Mounting Type :

Surface Mount

Surface Mount :

yes

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

1.3dB @ 1.8GHz

Published :

2011

Highest Frequency Band :

L B

Transistor Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency - Transition :

10.5GHz

JESD-30 Code :

R-PSSO-F3

Packaging :

Cut Tape (CT)

Factory Lead Time :

13 Weeks

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

Voltage - Collector Emitter Breakdown (Max) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Base Part Number :

BFU580

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Pin Count :

3

Number of Terminations :

3

Configuration :

Single

Reference Standard :

AEC-Q101; IEC-60134

Terminal Position :

Single

Package / Case :

TO-243AA