BFU725F,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Configuration :

Single

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 10mA 2V

JESD-30 Code :

R-PDSO-F4

Number of Terminations :

4

Power Dissipation-Max (Abs) :

0.136W

Highest Frequency Band :

C B

Transistor Application :

AMPLIFIER

Gain :

10dB ~ 24dB

Transistor Type :

NPN

Power - Max :

136mW

Case Connection :

Emitter

Voltage - Collector Emitter Breakdown (Max) :

2.8V

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Noise Figure (dB Typ @ f) :

0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Transistor Element Material :

SILICON GERMANIUM

Polarity/Channel Type :

NPN

Transition Frequency :

70000MHz

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Source Url Status Check Date :

2013-06-14 00:00:00

Additional Feature :

LOW NOISE

Base Part Number :

BFU725

Current - Collector (Ic) (Max) :

40mA

Pin Count :

4

Package / Case :

SOT-343F

Packaging :

Tape and Reel (TR)

Published :

2002

Frequency - Transition :

70GHz

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified