BR25L080FV-WE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Pin Count :

8

Base Part Number :

BR25L080

Radiation Hardening :

No

Mounting Type :

Surface Mount

Number of Terminations :

8

Write Cycle Time - Word, Page :

5ms

Packaging :

Tape and Reel (TR)

Clock Frequency :

5MHz

HTS Code :

8542.32.00.51

Standby Current-Max :

0.000002A

Operating Supply Voltage :

5V

Pbfree Code :

yes

Terminal Finish :

Tin/Copper (Sn/Cu)

JESD-609 Code :

e2

Peak Reflow Temperature (Cel) :

260

Supply Voltage :

2.5V

Memory Type :

Non-Volatile

Published :

2010

Supply Current-Max :

0.003mA

Memory Size :

8Kb 1K x 8

Supply Voltage-Min (Vsup) :

1.8V

JESD-30 Code :

R-PDSO-G8

Interface :

SPI, Serial

Memory Interface :

SPI

Memory Format :

EEPROM

Time@Peak Reflow Temperature-Max (s) :

10

Organization :

1KX8

Mount :

Surface Mount

Lead Free :

Lead Free

Number of Functions :

1

Width :

3mm

Voltage - Supply :

1.8V~5.5V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Data Retention Time-Min :

40

Contact Plating :

Copper, Tin

Serial Bus Type :

SPI

Endurance :

1000000 Write/Erase Cycles

Write Protection :

Hardware

Height Seated (Max) :

1.25mm

Length :

4.4mm

Package / Case :

8-LSSOP (0.173, 4.40mm Width)

Write Cycle Time-Max (tWC) :

5ms

Memory Width :

8

Operating Temperature :

-40°C~85°C TA

Density :

8 kB

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Pitch :

0.65mm