BS170-D74Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Packaging :

Tape and Box (TB)

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Base Part Number :

BS170

Power Dissipation-Max :

830mW Ta

Vgs(th) (Max) @ Id :

3V @ 1mA

Feedback Cap-Max (Crss) :

10 pF

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

5Ohm

Terminal Position :

BOTTOM

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

O-PBCY-T3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

0.5A

Number of Elements :

1

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Factory Lead Time :

11 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

FET Type :

N-Channel