BSO203SP

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Mfr.Part #
BSO203SP
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
P-CHANNEL POWER MOSFET
Stock
5,216
In Stock :
5,216

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Pin Count :
8
Gate to Source Voltage (Vgs) :
12 V
Mounting Type :
Surface Mount
Power Dissipation (Max) :
1.6W (Ta)
Channel Type :
P
Power Dissipation-Max (Abs) :
2.35 W
Input Capacitance :
2.38 nF
Terminal Form :
Gull wing
Subcategory :
Other Transistors
Product Status :
Active
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Drain-source On Resistance-Max :
0.021 Ω
Turn-Off Delay Time :
58 ns
Drain Current-Max (Abs) (ID) :
9 A
Surface Mount :
yes
Max Power Dissipation :
6.2 W
RoHS :
Compliant
Rise Time :
27 ns
HTS Code :
8541.29.00.95
ECCN Code :
EAR99
Continuous Drain Current Id :
9
Current Rating :
-9 A
Vgs (Max) :
±12V
Package Shape :
RECTANGULAR
FET Feature :
-
Terminal Finish :
Tin/Lead (Sn/Pb)
Manufacturer :
Infineon Technologies AG
Number of Terminals :
8
Gate Charge (Qg) (Max) @ Vgs :
39 nC @ 4.5 V
Packaging :
Digi-Reel®
Terminal Position :
Dual
Polarity/Channel Type :
P-Channel
Drain to Source Resistance :
21 mΩ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-On Delay Time :
15.6 ns
Drain to Source Breakdown Voltage :
-20 V
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Pbfree Code :
No
Pulsed Drain Current-Max (IDM) :
36 A
Supplier Device Package :
PG-DSO-8
Max Operating Temperature :
150 °C
Rds On (Max) @ Id, Vgs :
21mOhm @ 8.9A, 4.5V
Transistor Application :
SWITCHING
Power Dissipation :
2.35 W
Current - Continuous Drain (Id) @ 25°C :
7A (Ta)
Min Operating Temperature :
-55 °C
JESD-609 Code :
e0
Rds On Max :
4 mΩ
Factory Lead Time :
1 Week
Avalanche Energy Rating (Eas) :
97 mJ
Voltage Rating (DC) :
-20 V
Input Capacitance (Ciss) (Max) @ Vds :
3750 pF @ 15 V
Number of Pins :
8
FET Type :
P-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
OptiMOS®
Technology :
MOSFET (Metal Oxide)
Continuous Drain Current (ID) :
9 A
Reach Compliance Code :
Compliant
Mount :
Surface Mount
Package :
Bulk
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
30 V
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
1.2V @ 50µA
JESD-30 Code :
R-PDSO-G8
DS Breakdown Voltage-Min :
20 V
Operating Temperature :
-55°C ~ 150°C (TJ)
Transistor Element Material :
SILICON
Number of Elements :
1
Qualification Status :
Not Qualified
Datasheets
BSO203SP
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSO203SP from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, Operating Temperature:-55°C ~ 150°C (TJ), BSO203SP pinout, BSO203SP datasheet PDF, BSO203SP amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSO203SP ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSO203SP


MOSFET (Metal Oxide) P-Channel Digi-Reel® 21mOhm @ 8.9A, 4.5V ±12V 3750 pF @ 15 V 39 nC @ 4.5 V 30 V 8-SOIC (0.154, 3.90mm Width)

BSO203SP Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 97 mJ.A device's maximum input capacitance is 3750 pF @ 15 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9 A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20 V, and this device has a drain-to-source breakdown voltage of -20 V voltage.Its drain current is 9 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 58 ns.Its maximum pulsed drain current is 36 A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 21 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12 V.For normal operation, maintain the DS breakdown voltage above 20 V.To operate this transistor, you need to apply a 30 V drain to source voltage (Vdss).

BSO203SP Features


the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 9 A
a drain-to-source breakdown voltage of -20 V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 36 A.
single MOSFETs transistor is 21 mΩ
a 30 V drain to source voltage (Vdss)


BSO203SP Applications


There are a lot of Infineon
BSO203SP applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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