BSP250,135

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

1.65W

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Published :

1998

Vgs (Max) :

±20V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

4 Weeks

Max Dual Supply Voltage :

-30V

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

12A

Package / Case :

TO-261-4, TO-261AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

3A

Terminal Position :

Dual

Power Dissipation-Max :

1.65W Ta

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

250m Ω @ 1A, 10V

Transistor Element Material :

SILICON

Number of Pins :

4

Number of Terminations :

4

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drain Current-Max (Abs) (ID) :

3A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Resistance :

250mOhm

Operating Temperature :

150°C TJ

Surface Mount :

yes

Pin Count :

4

Radiation Hardening :

No

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Terminal Form :

Gull wing