BSP43,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

1.3W

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

80V

ECCN Code :

EAR99

Contact Plating :

Tin

JESD-609 Code :

e3

Max Power Dissipation :

1.3W

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

6.35mm

Max Breakdown Voltage :

80V

Package / Case :

TO-261-4, TO-261AA

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 5V

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2009

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

80V

Lead Free :

Lead Free

Length :

6.35mm

Width :

6.35mm

Factory Lead Time :

4 Weeks

Frequency :

100MHz

Transition Frequency :

100MHz

Number of Pins :

4

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

90V

Current - Collector Cutoff (Max) :

100nA ICBO

Element Configuration :

Single

Pin Count :

4

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Transistor Type :

NPN

Terminal Position :

Dual

Number of Terminations :

4

Gain Bandwidth Product :

100MHz

Weight :

4.535924g

Max Collector Current :

1A

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

Number of Elements :

1

Base Part Number :

BSP43