BSR14
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- Mfr.Part #
- BSR14
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.8A SOT23-3
- Stock
- 14,496
- In Stock ：
- 14,496
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- hFE Min :
- 35
- Number of Pins :
- 3
- Published :
- 2012
- Factory Lead Time :
- 39 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 300MHz
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- 75V
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Length :
- 2.92mm
- Transistor Application :
- SWITCHING
- Termination :
- SMD/SMT
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Power Dissipation :
- 350mW
- Radiation Hardening :
- No
- Weight :
- 30mg
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Type :
- NPN
- Transition Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 1V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Collector Current :
- 800mA
- Voltage - Rated DC :
- 40V
- Max Power Dissipation :
- 350mW
- Max Junction Temperature (Tj) :
- 150°C
- Height :
- 1.2mm
- Current Rating :
- 800mA
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Width :
- 1.3mm
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Base Part Number :
- BSR14
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Frequency :
- 300MHz
- Turn Off Time-Max (toff) :
- 285ns
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Datasheets
- BSR14
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSR14 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 800mA volts.
BSR14 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 800mA
a transition frequency of 300MHz
BSR14 Applications
There are a lot of ON Semiconductor
BSR14 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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