BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET SOT-23 P Channel 50V
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- MDD
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2013
- Lead Free :
- Lead Free
- Power Dissipation :
- 360mW
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Continuous Drain Current (ID) :
- 130mA
- Drain to Source Breakdown Voltage :
- -50V
- Rise Time :
- 6.3ns
- REACH SVHC :
- No SVHC
- Nominal Vgs :
- -1.7 V
- Voltage - Rated DC :
- -50V
- Width :
- 3.05mm
- Power Dissipation-Max :
- 360mW Ta
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Turn-Off Delay Time :
- 10 ns
- Min Operating Temperature :
- -55°C
- Termination :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Resistance :
- 10Ohm
- Height :
- 930μm
- Current :
- 13A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mounting Type :
- Surface Mount
- Resistance :
- 10Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Input Capacitance :
- 73pF
- Fall Time (Typ) :
- 6.3 ns
- Rds On Max :
- 10 Ω
- FET Type :
- P-Channel
- Dual Supply Voltage :
- -50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- -130mA
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Voltage :
- 50V
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Drain to Source Voltage (Vdss) :
- 50V
- Supplier Device Package :
- SOT-23-3
- Turn On Delay Time :
- 2.5 ns
- Element Configuration :
- Single
- Number of Pins :
- 3
- Threshold Voltage :
- -1.7V
- Max Operating Temperature :
- 150°C
- Factory Lead Time :
- 8 Weeks
- Length :
- 2.92mm
- Datasheets
- BSS84

P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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