BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- UTD Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- 50V 130MA 300MW 10R@5V,100MA 2V@
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- UTD Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- SOT-23-3
- Power Dissipation :
- 360mW
- Turn On Delay Time :
- 2.5 ns
- Drain to Source Resistance :
- 10Ohm
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Current Rating :
- -130mA
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Voltage :
- 50V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 10 ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Threshold Voltage :
- -1.7V
- Power Dissipation-Max :
- 360mW Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 73pF
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Voltage - Rated DC :
- -50V
- Min Operating Temperature :
- -55°C
- Factory Lead Time :
- 8 Weeks
- Fall Time (Typ) :
- 6.3 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Resistance :
- 10Ohm
- Current :
- 13A
- Rds On Max :
- 10 Ω
- Width :
- 3.05mm
- Nominal Vgs :
- -1.7 V
- Drain to Source Voltage (Vdss) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- -50V
- Number of Elements :
- 1
- Dual Supply Voltage :
- -50V
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Continuous Drain Current (ID) :
- 130mA
- Height :
- 930μm
- Rise Time :
- 6.3ns
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Contact Plating :
- Tin
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Lead Free :
- Lead Free
- Length :
- 2.92mm
- Max Operating Temperature :
- 150°C
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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