BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- UTD Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- 50V 130MA 300MW 10R@5V,100MA 2V@
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- UTD Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 130mA
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- SOT-23-3
- Mounting Type :
- Surface Mount
- Nominal Vgs :
- -1.7 V
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Width :
- 3.05mm
- Gate to Source Voltage (Vgs) :
- 20V
- Termination :
- SMD/SMT
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Published :
- 2013
- Drain to Source Breakdown Voltage :
- -50V
- Current Rating :
- -130mA
- Mount :
- Surface Mount
- Rise Time :
- 6.3ns
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 50V
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- -50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 73pF
- Turn-Off Delay Time :
- 10 ns
- Number of Elements :
- 1
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Height :
- 930μm
- Power Dissipation :
- 360mW
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 8 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Number of Pins :
- 3
- FET Type :
- P-Channel
- Element Configuration :
- Single
- Length :
- 2.92mm
- Current :
- 13A
- Drain to Source Resistance :
- 10Ohm
- Fall Time (Typ) :
- 6.3 ns
- Threshold Voltage :
- -1.7V
- Voltage :
- 50V
- Dual Supply Voltage :
- -50V
- Turn On Delay Time :
- 2.5 ns
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Resistance :
- 10Ohm
- Contact Plating :
- Tin
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Power Dissipation-Max :
- 360mW Ta
- Rds On Max :
- 10 Ω
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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