BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- UTD Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- 50V 130MA 300MW 10R@5V,100MA 2V@
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- UTD Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Termination :
- SMD/SMT
- Element Configuration :
- Single
- Power Dissipation :
- 360mW
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Current :
- 13A
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Voltage :
- 50V
- Rise Time :
- 6.3ns
- Max Operating Temperature :
- 150°C
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Threshold Voltage :
- -1.7V
- Length :
- 2.92mm
- Voltage - Rated DC :
- -50V
- Supplier Device Package :
- SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Published :
- 2013
- Drain to Source Resistance :
- 10Ohm
- Contact Plating :
- Tin
- Rds On Max :
- 10 Ω
- Power Dissipation-Max :
- 360mW Ta
- Dual Supply Voltage :
- -50V
- Lead Free :
- Lead Free
- FET Type :
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Width :
- 3.05mm
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Drain to Source Voltage (Vdss) :
- 50V
- Continuous Drain Current (ID) :
- 130mA
- Current Rating :
- -130mA
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Number of Elements :
- 1
- Nominal Vgs :
- -1.7 V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Input Capacitance :
- 73pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Drain to Source Breakdown Voltage :
- -50V
- Fall Time (Typ) :
- 6.3 ns
- Resistance :
- 10Ohm
- Turn On Delay Time :
- 2.5 ns
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Height :
- 930μm
- Turn-Off Delay Time :
- 10 ns
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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