BU900TP
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- Mfr.Part #
- BU900TP
- Manufacturer
- STMicroelectronics
- Package / Case
- SOT-82
- Datasheet
- Download
- Description
- TRANS NPN 370V 5A SOT82-3
- Stock
- 8,357
- In Stock ：
- 8,357
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- Power - Max :
- 55W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Packaging :
- Tube
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 7000
- Number of Pins :
- 3
- Max Collector Current :
- 5A
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 7000 @ 1A 5V
- Transistor Type :
- NPN - Trilinton, Zener Clamp
- Reach Compliance Code :
- Unknown
- Package / Case :
- SOT-82
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 3mA, 3A
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Base Part Number :
- BU900
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 4V
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100μA
- Emitter Base Voltage (VEBO) :
- 13V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 370V
- Max Power Dissipation :
- 55W
- Datasheets
- BU900TP
NPN - Trilinton, Zener Clamp 150°C TJ 100μA 1 Elements 3 Terminations SILICON SOT-82 Tube Through Hole
BU900TP Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 7000 @ 1A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 3mA, 3A.The emitter base voltage can be kept at 13V for high efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
BU900TP Features
the DC current gain for this device is 7000 @ 1A 5V
the vce saturation(Max) is 4V @ 3mA, 3A
the emitter base voltage is kept at 13V
BU900TP Applications
There are a lot of STMicroelectronics
BU900TP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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