BUK9107-55ATE,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 50A, 10V

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

55V

FET Type :

N-Channel

Series :

TrenchMOS™

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

108nC @ 5V

Drain Current-Max (Abs) (ID) :

75A

Drain-source On Resistance-Max :

0.0077Ohm

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

560A

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

JESD-609 Code :

e3

Transistor Element Material :

SILICON

FET Feature :

Temperature Sensing Diode

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

55V

Vgs (Max) :

±15V

Published :

2002

HTS Code :

8541.29.00.75

Terminal Finish :

Tin (Sn)

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Number of Elements :

1

Power Dissipation-Max :

272W Tc

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

500 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

5836pF @ 25V

Pin Count :

5

JESD-30 Code :

R-PSSO-G4

Package / Case :

TO-263-5, D2Pak (4 Leads + Tab), TO-263BB