BUL216
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- Mfr.Part #
- BUL216
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 4A TO220
- Stock
- 147
- In Stock ：
- 147
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 9.15mm
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Current Rating :
- 4A
- Collector Base Voltage (VCBO) :
- 1.6kV
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 660mA, 2A
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 90W
- Pin Count :
- 3
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1V
- VCEsat-Max :
- 3 V
- Collector Emitter Voltage (VCEO) :
- 800V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 4A
- Element Configuration :
- Single
- Number of Terminations :
- 3
- hFE Min :
- 12
- Width :
- 4.6mm
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 250μA
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- 150°C TJ
- Turn Off Time-Max (toff) :
- 4020ns
- Emitter Base Voltage (VEBO) :
- 9V
- Weight :
- 90.718474mg
- Length :
- 10.4mm
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Emitter Breakdown Voltage :
- 800V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Power Dissipation :
- 90W
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BUL216
- Voltage - Rated DC :
- 800V
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 400mA 5V
- Transistor Application :
- SWITCHING
- Datasheets
- BUL216
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL216 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 400mA 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 660mA, 2A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.Collector current can be as low as 4A volts at its maximum.
BUL216 Features
the DC current gain for this device is 12 @ 400mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 660mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
BUL216 Applications
There are a lot of STMicroelectronics
BUL216 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BUL213 | STMicroelectronics | 11,724 | TRANS NPN 600V 3A TO220 |
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