DDTC114EE-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Height :

750μm

Package / Case :

SOT-523

Min Operating Temperature :

-55°C

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Width :

800μm

Element Configuration :

Single

hFE Min :

30

Transistor Type :

NPN - Pre-Biased

Length :

1.6mm

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

250MHz

Factory Lead Time :

19 Weeks

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Voltage - Rated DC :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

300mV

Max Power Dissipation :

150mW

Number of Pins :

3

Frequency - Transition :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

100mA

Mount :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

ECCN Code :

EAR99

Weight :

2.012816mg

Published :

2006

Terminal Form :

Gull wing

Resistor - Base (R1) :

10 k Ω

Number of Elements :

1

Terminal Position :

Dual

Lead Free :

Lead Free

Pin Count :

3

HTS Code :

8541.21.00.75

Qualification Status :

Not Qualified

Current Rating :

50mA

Max Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

10 k Ω

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

NPN

Number of Terminations :

3