DMG6402LVT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Length :

2.9mm

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

6A

ECCN Code :

EAR99

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power Dissipation-Max :

1.75W Ta

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Fall Time (Typ) :

2.8 ns

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

6A

Factory Lead Time :

23 Weeks

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

11.4nC @ 10V

Vgs (Max) :

±20V

Height :

900μm

Rds On (Max) @ Id, Vgs :

30m Ω @ 7A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

13.9 ns

Input Capacitance (Ciss) (Max) @ Vds :

498pF @ 15V

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Number of Pins :

26

FET Type :

N-Channel

Number of Channels :

1

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Element Configuration :

Single

Rise Time :

6.2ns

Published :

2013

Width :

1.6mm

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

3.4 ns