DN3525N8-G

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Mfr.Part #
DN3525N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 250V 360MA TO243AA
Stock
40,762
In Stock :
40,762

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Type :
N
MSL :
MSL 1 - Unlimited
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
FAST SWITCHING
Number of Terminations :
3
Width :
2.6mm
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Mount :
Surface Mount
Height :
1.6mm
Gate to Source Voltage (Vgs) :
20V
Transistor Type :
1 N-Channel
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Number of Terminals :
3
Transistor Polarity :
N-Channel
Package Shape :
RECTANGULAR
Continuous Drain Current (ID) :
360mA
Drain to Source Breakdown Voltage :
250V
Power Dissipation-Max :
1.6W Ta
Drain to Source Voltage (Vdss) :
250V
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
360mA Tj
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Turn On Delay Time :
20 ns
Length :
4.6mm
Vgs (Max) :
±20V
Maximum Operating Temperature :
+ 150 C
Reach Compliance Code :
Compliant
Mounting Type :
Surface Mount
Mounting Style :
SMD/SMT
Minimum Operating Temperature :
- 55 C
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
6Ohm
Number of Pins :
3
JESD-609 Code :
e3
Fall Time (Typ) :
25 ns
Factory Lead Time :
7 Weeks
Rise Time :
25ns
Series :
--
Product Status :
Active
Drive Voltage (Max Rds On,Min Rds On) :
0V
Power Dissipation :
1.6W
Packaging :
Tape and Reel (TR)
Channel Mode :
Depletion
Subcategory :
MOSFETs
Time@Peak Reflow Temperature-Max (s) :
40
DS Breakdown Voltage-Min :
250 V
Terminal Position :
Single
Surface Mount :
yes
Terminal Finish :
Matte Tin (Sn) - annealed
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Qualification Status :
Not Qualified
Power Dissipation (Max) :
1.6W (Ta)
Continuous Drain Current Id :
360
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
RoHS :
Details
Vgs(th) (Max) @ Id :
--
Operating Mode :
Depletion Mode
Weight :
52.786812mg
Turn-Off Delay Time :
25 ns
Element Configuration :
Single
Package / Case :
TO-243AA
Supplier Device Package :
TO-243AA (SOT-89)
Type :
FET
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-F3
Qualification :
-
JEDEC-95 Code :
TO-243AA
Transistor Application :
SWITCHING
Base Product Number :
DN3525
ECCN Code :
EAR99
Radiation Hardening :
No
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
6 Ω @ 200mA, 0V
FET Feature :
Depletion Mode
Manufacturer :
Microchip
Product :
MOSFET Small Signal
Number of Channels :
1
Terminal Form :
Flat
Pulsed Drain Current-Max (IDM) :
1A
Published :
2009
Brand :
Microchip Technology
Peak Reflow Temperature (Cel) :
260
Datasheets
DN3525N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3525N8-G from Xinshop,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-243AA, Type:FET, Number of Channels:1, DN3525N8-G pinout, DN3525N8-G datasheet PDF, DN3525N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3525N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3525N8-G


N-Channel Tape & Reel (TR) 6 Ω @ 200mA, 0V ±20V 350pF @ 25V 250V TO-243AA

DN3525N8-G Overview


A device's maximum input capacitance is 350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 360mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Its maximum pulsed drain current is 1A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.

DN3525N8-G Features


a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 1A.
a 250V drain to source voltage (Vdss)


DN3525N8-G Applications


There are a lot of Microchip Technology
DN3525N8-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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