DN3525N8-G
- Mfr.Part #
- DN3525N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 360MA TO243AA
- Stock
- 40,762
- In Stock :
- 40,762
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Channel Type :
- N
- MSL :
- MSL 1 - Unlimited
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- FAST SWITCHING
- Number of Terminations :
- 3
- Width :
- 2.6mm
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Height :
- 1.6mm
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Type :
- 1 N-Channel
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Number of Terminals :
- 3
- Transistor Polarity :
- N-Channel
- Package Shape :
- RECTANGULAR
- Continuous Drain Current (ID) :
- 360mA
- Drain to Source Breakdown Voltage :
- 250V
- Power Dissipation-Max :
- 1.6W Ta
- Drain to Source Voltage (Vdss) :
- 250V
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 360mA Tj
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 20 ns
- Length :
- 4.6mm
- Vgs (Max) :
- ±20V
- Maximum Operating Temperature :
- + 150 C
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Surface Mount
- Mounting Style :
- SMD/SMT
- Minimum Operating Temperature :
- - 55 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 6Ohm
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 25 ns
- Factory Lead Time :
- 7 Weeks
- Rise Time :
- 25ns
- Series :
- --
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Power Dissipation :
- 1.6W
- Packaging :
- Tape and Reel (TR)
- Channel Mode :
- Depletion
- Subcategory :
- MOSFETs
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DS Breakdown Voltage-Min :
- 250 V
- Terminal Position :
- Single
- Surface Mount :
- yes
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 1.6W (Ta)
- Continuous Drain Current Id :
- 360
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- RoHS :
- Details
- Vgs(th) (Max) @ Id :
- --
- Operating Mode :
- Depletion Mode
- Weight :
- 52.786812mg
- Turn-Off Delay Time :
- 25 ns
- Element Configuration :
- Single
- Package / Case :
- TO-243AA
- Supplier Device Package :
- TO-243AA (SOT-89)
- Type :
- FET
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-F3
- Qualification :
- -
- JEDEC-95 Code :
- TO-243AA
- Transistor Application :
- SWITCHING
- Base Product Number :
- DN3525
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 200mA, 0V
- FET Feature :
- Depletion Mode
- Manufacturer :
- Microchip
- Product :
- MOSFET Small Signal
- Number of Channels :
- 1
- Terminal Form :
- Flat
- Pulsed Drain Current-Max (IDM) :
- 1A
- Published :
- 2009
- Brand :
- Microchip Technology
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- DN3525N8-G

N-Channel Tape & Reel (TR) 6 Ω @ 200mA, 0V ±20V 350pF @ 25V 250V TO-243AA
DN3525N8-G Overview
A device's maximum input capacitance is 350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 360mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Its maximum pulsed drain current is 1A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.
DN3525N8-G Features
a continuous drain current (ID) of 360mA
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 1A.
a 250V drain to source voltage (Vdss)
DN3525N8-G Applications
There are a lot of Microchip Technology
DN3525N8-G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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